SK50DGDL066ETE2 ? by semikron rev. 0.1 ? 08.02.2017 1 semitop ? e2 dgdl-et 3-phase bridge rectifer + brake chopper + 3-phase bridge inverter engineering sample SK50DGDL066ETE2 target data features ? low inductive design ? press-fit contact technology ? rugged mounting due to integrated mounting clamps ? heat transfer and insulation through direct copper bonded aluminium oxide ceramic (dbc) ? trench3 600v igbt technology ? cal technology fwd ? ul recognized file no. e 63 532 ? integrated ntc temperature sensor typical applications* ? inverter up to 18kva ? typical motor power 7.5kw remarks ?igbt1: inverter igbt ?igbt2: brake igbt ? diode1: rectifier diode section ? diode2: apd inverter ? diode3: fwd brake absolute maximum ratings symbol conditions values unit igbt 1 v ces t j =25c 600 v i c t j = 175 c t s =25c 53 a t s =70c 42 a i cnom 50 a i crm i crm = 2 x i cnom 100 a v ges -20 ... 20 v t psc v cc = 360 v v ge 15 v v ces 600 v t j =150c 6s t j -40 ... 175 c absolute maximum ratings symbol conditions values unit igbt 2 v ces t j =25c 600 v i c t j = 175 c t c =25c 53 a t c =70c 42 a i cnom 50 a i crm i crm = 2 x i cnom 100 a v ges -20 ... 20 v t psc v cc = 360 v v ge 15 v v ces 600 v t j =150c 6s t j -40 ... 175 c absolute maximum ratings symbol conditions values unit diode 1 v rrm t j =25c 1600 v i f t j = 150 c t s =25c 51 a t s =70c 38 a i fnom 18 a i fsm 10 ms, sin 180, t j =150c 350 a i 2 t 10 ms, sin 180, t j =150c 612 a2s t j -40 ... 150 c absolute maximum ratings symbol conditions values unit diode 2 v rrm t j =25c 600 v i f t j = 175 c t s =25c 49 a t s =70c 39 a i fnom 50 a i frm i frm = 2 x i fnom 100 a i fsm 10 ms, sin 180, t j =150c 320 a t j -40 ... 175 c
SK50DGDL066ETE2 2 rev. 0.1 ? 08.02.2017 ? by semikron semitop ? e2 dgdl-et 3-phase bridge rectifer + brake chopper + 3-phase bridge inverter engineering sample SK50DGDL066ETE2 target data features ? low inductive design ? press-fit contact technology ? rugged mounting due to integrated mounting clamps ? heat transfer and insulation through direct copper bonded aluminium oxide ceramic (dbc) ? trench3 600v igbt technology ? cal technology fwd ? ul recognized file no. e 63 532 ? integrated ntc temperature sensor typical applications* ? inverter up to 18kva ? typical motor power 7.5kw remarks ?igbt1: inverter igbt ?igbt2: brake igbt ? diode1: rectifier diode section ? diode2: apd inverter ? diode3: fwd brake absolute maximum ratings symbol conditions values unit diode 3 v rrm t j =25c 600 v i f t j = 175 c t s =25c 49 a t s =70c 39 a i fnom 50 a i frm i frm = 2 x i fnom 100 a i fsm 10 ms, sin 180, t j =150c 320 a t j -40 ... 175 c absolute maximum ratings symbol conditions values unit module i t(rms) t terminal = 100 c, t s = 60c t.b.d. a t stg -40 ... 125 c v isol ac, sinusoidal, t = 1 min 2500 v characteristics symbol conditions min. typ. max. unit igbt 1 v ce(sat) i c =50a v ge =15v chiplevel t j =25c 1.45 1.85 v t j =150c 1.65 2.05 v v ce0 chiplevel t j =25c 0.90 1.10 v t j =150c 0.80 1.00 v r ce v ge =15v chiplevel t j =25c 11 15 m t j =150c 17 21 m v ge(th) v ge =v ce , i c =0.8ma 55.86.5v i ces v ge =0v v ce = 600 v t j =25c -ma -ma c ies v ce =25v v ge =0v f=1mhz 3.14 nf c oes f=1mhz 0.2 nf c res f=1mhz 0.093 nf q g - 8 v...+ 15 v 270 nc r gint t j =25c 0 t d(on) v cc = 300 v i c =50a r g on =8.2 r g off =8.2 v ge neg =-15v v ge pos =15v t j =150c ns t r t j =150c ns e on t j =150c 0.85 mj t d(off) t j =150c ns t f t j =150c ns e off t j =150c 1.6 mj r th(j-s) per igbt 1.31 k/w
SK50DGDL066ETE2 ? by semikron rev. 0.1 ? 08.02.2017 3 semitop ? e2 dgdl-et 3-phase bridge rectifer + brake chopper + 3-phase bridge inverter engineering sample SK50DGDL066ETE2 target data features ? low inductive design ? press-fit contact technology ? rugged mounting due to integrated mounting clamps ? heat transfer and insulation through direct copper bonded aluminium oxide ceramic (dbc) ? trench3 600v igbt technology ? cal technology fwd ? ul recognized file no. e 63 532 ? integrated ntc temperature sensor typical applications* ? inverter up to 18kva ? typical motor power 7.5kw remarks ?igbt1: inverter igbt ?igbt2: brake igbt ? diode1: rectifier diode section ? diode2: apd inverter ? diode3: fwd brake characteristics symbol conditions min. typ. max. unit igbt 2 v ce(sat) i c =50a v ge =15v chiplevel t j =25c 1.45 1.85 v t j =150c 1.65 2.05 v v ce0 chiplevel t j =25c 0.90 1.10 v t j =150c 0.80 1.00 v r ce v ge =15v chiplevel t j =25c 11 15 m t j =150c 17 21 m v ge(th) v ge =v ce v, i c =0.8ma 55.86.5v i ces v ge =0v v ce = 600 v t j =25c -ma t j =150c -ma c ies v ce =25v v ge =0v f=1mhz 3.14 nf c oes f=1mhz 0.2 nf c res f=1mhz 0.093 nf q g - 8 v...+ 15 v 270 nc r gint t j =25c 0 t d(on) v cc = 300 v i c =50a r g on =8.2 r g off =8.2 v ge neg =-15v v ge pos =15v t j =150c ns t r t j =150c ns e on t j =150c 0.85 mj t d(off) t j =150c ns t f t j =150c ns e off t j =150c 1.6 mj r th(j-s) per igbt 1.31 k/w characteristics symbol conditions min. typ. max. unit diode 1 v f i f =18a chiplevel t j =25c 1.00 1.21 v t j =150c 0.90 1.10 v v f0 chiplevel t j =25c 0.88 0.98 v t j =125c 0.73 0.83 v r f chiplevel t j =25c 6.7 13 m t j =125c 9.4 15 m i rrm i f =18a -a q rr -c e rr -mj r th(j-s) per diode 1.46 k/w
SK50DGDL066ETE2 4 rev. 0.1 ? 08.02.2017 ? by semikron semitop ? e2 dgdl-et 3-phase bridge rectifer + brake chopper + 3-phase bridge inverter engineering sample SK50DGDL066ETE2 target data features ? low inductive design ? press-fit contact technology ? rugged mounting due to integrated mounting clamps ? heat transfer and insulation through direct copper bonded aluminium oxide ceramic (dbc) ? trench3 600v igbt technology ? cal technology fwd ? ul recognized file no. e 63 532 ? integrated ntc temperature sensor typical applications* ? inverter up to 18kva ? typical motor power 7.5kw remarks ?igbt1: inverter igbt ?igbt2: brake igbt ? diode1: rectifier diode section ? diode2: apd inverter ? diode3: fwd brake characteristics symbol conditions min. typ. max. unit diode 2 v f i f =50a chiplevel t j =25c 1.47 1.87 v t j =150c 1.50 1.78 v v f0 chiplevel t j =25c 0.99 1.10 v t j =150c 0.80 0.89 v r f chiplevel t j =25c 9.6 15 m t j =150c 14 18 m i rrm i f =50a v ge =-15v v cc = 300 v t j =150c a q rr t j =150c c e rr t j =150c 0.9 mj r th(j-s) per diode 1.8 k/w characteristics symbol conditions min. typ. max. unit diode 3 v f i f =50a chiplevel t j =25c 1.47 1.87 v t j =150c 1.50 1.78 v v f0 chiplevel t j =25c 0.99 1.10 v t j =150c 0.80 0.89 v r f chiplevel t j =25c 9.6 15 m t j =150c 14 18 m i rrm i f =50a v ge =-15v v cc = 300 v t j =150c a q rr t j =150c c e rr t j =150c 0.9 mj r th(j-s) 1.8 k/w characteristics symbol conditions min. typ. max. unit module m s to heatsink 2 2.1 nm wweight 34 g characteristics symbol conditions min. typ. max. unit temperature sensor r 100 t r =100c 493 5% b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k
SK50DGDL066ETE2 ? by semikron rev. 0.1 ? 08.02.2017 5 semitop ? e2 dgdl-et
SK50DGDL066ETE2 6 rev. 0.1 ? 08.02.2017 ? by semikron this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. *important information and warnings the specifications of semikron products may not be consid ered as guarantee or assurance of product characteristics ("beschaffenheitsgarantie"). the specifications of semikron products describe only the usual characteristics of products to be expected in typical applications, which may still vary depe nding on the specific application. therefore, products must be tested for the re spective application in advance. application adjustments may be necessary. the user of semikron products is responsible for the safety o f their applications embedding semikron pr oducts and must take adequate safety measures to prevent the applications from causing a phys ical injury, fire or other problem if any of semi kron products become faulty. the user is responsible to make su re that the applicat ion design is compliant with all applicable laws, regulati ons, norms and standards. exce pt as otherwise explicitly approved by semikron in a written document signed by authorized representatives of semikron, semikr on products may not be used in any applications where a failur e of the product or any consequences of the use thereof can reasonably be expected to result in person al injury. no representation o r warranty is given and no liability is assumed with respect to the accuracy, completeness and/or use of any information herein, including wi thout limitation, warranties of non-infringement of intellectual property rights of any third party. semikron does not assume any liability arisi ng out of the applications or use of any product; neither does it convey an y license under its patent rights, copyrights, trade secrets or ot her intellectual property rights, nor the rights of others. semikron makes no re presentation or warranty of non- infringement or alleged non-infr ingement of intellectual property rights of any third party which may arise fr om applications. due to technica l requirements our products m ay contain dangerous substances. for information on the types in question pl ease contact the nearest semikron sales office. this document supersedes and replaces all information previously supplied and ma y be superseded by updates. semikron reserves the right to ma ke changes. in accordance with the quality guidelines of semikron, we woul d like to point out that the products are engineering samples. th ese engineering samples are not yet produced under quality conditions approaching those of series production, and are at the presen t time not included in the semikron quality monitoring and control process. neither the product nor the prod uction process has to date gon e completely through the semikron internal authorization procedure. semikron may make any amendments without any prior notification. semikro n cannot and shall not promise or commit itself to release and/or make available a final version or series product after the deve lopment phase. semikron cannot and will not assume any responsibility with regard to freedom from defects, functionality, and adaptation to an d interaction with possible applications of the user or with regard to any other potential risks resulting fr om the use of engineering sample s. therefore semikron explicitly excludes any warranty an d liability; as far as legally possible. the customer shall fully indemnify and hol d harmless semikron from any and all risks, damages, lo sses, expenses and costs dire ctly or indirectly resultin g out of or in connection w ith the commissioning, operation, system integration, sale, dissemination or any other kind of use of engineering samples by the custom er and/or any third party, which has come into possession of engineering samples through or be cause of the customer. all know-how and all reg isterable and non-registerable copyrights an d industrial property rights arising from or in connection with these engineering samples rem ain the exclusive property of semikron.
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